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document number: 94486 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 1 igbt sip module (ultrafast igbt) CPV363M4UPBF vishay high power products features ? fully isolated printed circuit board mount package ? switching-loss rating includes all ?tail? losses ? hexfred ? soft ultrafast diodes ? optimized for medium speed 1 to 10 khz see fig. 1 for current vs. frequency curve ? totally lead (pb)-free ? designed and qualified for industrial level description the igbt technology is the key to vishay?s hpp advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of t he familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. this package is highly suited to motor drive applications and wh ere space is at a premium. notes (1) repetitive rating; v ge = 20 v, pulse width limited by maxi mum junction temperature (see fig. 20) (2) v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 23 (see fig. 19) product summary output current in a typical 20 khz motor drive i rms per phase (2.1 kw total) with t c = 90 c 7.1 a rms t j 125 c supply voltage 360 vdc power factor 0.8 modulation depth (see fig. 1) 115 % v ce(on) (typical) at i c = 6.8 a, 25 c 1.7 v ims-2 rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 600 v continuous collector current, each igbt i c t c = 25 c 13 a t c = 100 c 6.8 pulsed collector current i cm (1) 40 clamped inductive load current i lm (2) 40 diode continuous forward current i f t c = 100 c 6.1 diode maximum forward current i fm 40 gate to emitter voltage v ge 20 v isolation voltage v isol any terminal to case, t = 1 min 2500 v rms maximum power dissipation, each igbt p d t c = 25 c 36 w t c = 100 c 14 operating junction and st orage temperature range t j , t stg - 40 to + 150 c soldering temperature for 10 s, (0.063" (1.6 mm) from case) 300 mounting torque 6-32 or m3 screw 5 to 7 (0.55 to 0.8) lbf ? in (n ? m)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94486 2 revision: 01-sep-08 CPV363M4UPBF vishay high power products igbt sip module (ultrafast igbt) notes (1) pulse width 80 s, duty factor 0.1 % (2) pulse width 5.0 s; single shot thermal and mechanical specifications parameter symbol typ. max. units junction to case, each igbt, one igbt in conduction r thjc (igbt) - 3.5 c/w junction to case, each diode, one diode in conduction r thjc (diode) - 5.5 case to sink, flat, greased surface r thcs (module) 0.10 - weight of module 20 - g 0.7 - oz. electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v (br)ces (1) v ge = 0 v, i c = 250 a 600 - - v temperature coeff. of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1.0 ma - 0.63 - v/c collector to emitter saturation voltage v ce(on) i c = 6.8 a v ge = 15 v see fig. 2, 5 -1.702.2 v i c = 13 a - 2.00 - i c = 6.8 a, t j = 150 c - 1.70 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage v ge(th) / t j -- 11-mv/c forward transconductance g fe (2) v ce = 100 v, i c = 6.8 a 4.0 6.0 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 2500 diode forward voltage drop v fm i c = 12 a see fig. 13 -1.41.7 v i c = 12 a, t j = 150 c - 1.3 1.6 gate to emitter leakage current i ges v ge = 20 v - - 100 na
document number: 94486 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 3 CPV363M4UPBF igbt sip module (ultrafast igbt) vishay high power products switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 6.8 a v cc = 400 v see fig. 8 -5379 nc gate to emitter charge (turn-on) q ge -7.712 gate to collector charge (turn-on) q gc -2131 turn-on delay time t d(on) t j = 25 c i c = 6.8 a, v cc = 480 v v ge = 15 v, r g = 23 energy losses incl ude ?tail? and diode reverse recovery. see fig. 9, 10, 11, 18 -43- ns rise time t r -14- turn-off delay time t d(off) -95140 fall time t f -83190 turn-on switching loss e on -0.17- mj turn-off switching loss e off -0.15- total switching loss e ts - 0.32 0.45 turn-on delay time t d(on) t j = 150 c i c = 6.8 a, v cc = 480 v v ge = 15 v, r g = 23 energy losses include ?tail? and diode reverse recovery see fig. 9, 10, 11, 18 -41- ns rise time t r -16- turn-off delay time t d(off) - 110 - fall time t f - 230 - total switching loss e ts -0.52-mj input capacitance c ies v ge = 0 v v cc = 30 v ? = 1.0 mhz see fig. 7 - 1100 - pf output capacitance c oes -73- reverse transfer capacitance c res -14- diode reverse recovery time t rr t j = 25 c see fig. 14 i f = 12 a v r = 200 v di/dt = 200 a/s -4260 ns t j = 125 c - 83 120 diode peak reverse recovery charge i rr t j = 25 c see fig. 15 -3.56.0 a t j = 125 c - 5.6 10 diode reverse recovery charge q rr t j = 25 c see fig. 16 -80180 nc t j = 125 c - 220 600 diode peak rate of fall of recovery during t b di (rec)m /dt t j = 25 c see fig. 17 - 180 - a/s t j = 125 c - 116 -
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94486 4 revision: 01-sep-08 CPV363M4UPBF vishay high power products igbt sip module (ultrafast igbt) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical trans fer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collector to emitter voltage vs. junction temperature 0.1 1 10 100 0 2 4 6 8 10 12 f, frequency (khz) load current (a) tc = 90c tj = 125c power factor = 0.8 modulation depth = 1.15 vcc = 50% of rated voltage 0.00 0.58 1.17 1.75 2.33 2.92 3.50 total output power (kw) 0.1 1 10 100 0 1 1 1 . 0 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge 0.1 1 10 100 5678910 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) v = 10v 5s pulse width cc 0 2 4 6 8 10 12 14 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 3.4 c i = a 6.8 c i = a 13.6 c
document number: 94486 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 5 CPV363M4UPBF igbt sip module (ultrafast igbt) vishay high power products fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs . collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching los ses vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 400 800 1200 1600 2000 0 0 1 0 1 1 ce c, capacitance (pf) v , collector-to-emitter voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 6.8a cc c 0 12 24 36 48 60 0.30 0.32 0.34 0.36 0.38 0.40 r , gate resistance ( ) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 6.8a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 23 v = 15v v = 480v g ge cc i = a 13.6 c i = a 6.8 c i = a 3.4 c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94486 6 revision: 01-sep-08 CPV363M4UPBF vishay high power products igbt sip module (ultrafast igbt) fig. 11 - typical switching losses vs. collector to emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 0 2 4 6 8 10 12 14 16 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i , collector-to-emitter current (a) total switching losses (mj) c r = 23 t = 150 c v = 480v v = 15v g j cc ge 0.1 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area 1 10 100 0.4 1.4 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
document number: 94486 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 7 CPV363M4UPBF igbt sip module (ultrafast igbt) vishay high power products fig. 14 - typical reverse recovery time vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs di f /dt 0 40 80 120 160 0 0 0 1 0 0 1 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 0 0 0 1 0 0 1 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 0 0 0 1 0 0 1 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 0 0 0 1 0 0 1 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94486 8 revision: 01-sep-08 CPV363M4UPBF vishay high power products igbt sip module (ultrafast igbt) fig. 18a - test circuit for measurements of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr fig. 18e - macro waveforms for figure 18a?s test circuit same type de v ice as d.u.t. d.u.t. 430 f 8 0 % of v ce t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) eon = diode reverse recovery energy tx erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt vg gate signal device under tes current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2
document number: 94486 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 9 CPV363M4UPBF igbt sip module (ultrafast igbt) vishay high power products fig. 19 - clamped inductive load test circuit fig . 20 - pulsed collector current test circuit circuit configuration d.u.t. 50 v 6000 f 100 v 1000 v l v c 0 - 4 8 0 v r l = 4 8 0 v 4 x i c at 25 c 3 61 8 15 41016 9 12 71319 q1 q2 q3 d1 d2 d3 d4 d5 d6 q4 q5 q6 1 links to related documents dimensions http://www.vishay.com/doc?95066
document number: 95066 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jul-07 1 ims-2 (sip) outline dimensions vishay semiconductors dimensions in millimeters (inches) notes (1) tolerance uless otherwise sp ecified 0.254 mm (0.010") (2) controlling dimension: inch (3) terminal numbers are sh own for reference only ims-2 package outline (13 pins) 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 6.10 (0.240) 3.05 0.38 (0.120 0.015) 0.51 (0.020) 0.38 (0.015) 62.43 (2.458) 53.85 (2.120) ? 3.91 (0.154) 2 x 21.97 (0.865) 3.94 (0.155) 4.06 0.51 (0.160 0.020) 5.08 (0.200) 6 x 1.27 (0.050) 13 x 2.54 (0.100) 6 x 0.76 (0.030) 13 x 1 3 4 6 7 9 10 12 13 15 16 18 19 17 14 11 258
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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